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  july 2009 doc id 15360 rev 3 1/10 10 STGW40N120KD 40 a, 1200 v, short circuit rugged igbt features low on-losses high current capability low gate charge short circuit withstand time 10 s igbt co-packaged with ultra fast free-wheeling diode application motor control description this igbt utilizes th e advanced powermesh? process resulting in an excellent trade-off between switching performance and low on-state behavior. figure 1. internal schematic diagram to-247 1 2 3 table 1. device summary order code marking package packaging STGW40N120KD gw40n120kd to-247 tube www.st.com
contents STGW40N120KD 2/10 doc id 15360 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
STGW40N120KD electrical ratings doc id 15360 rev 3 3/10 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ces collector-emitter voltage (v ge = 0) 1200 v i c (1) 1. calculated according to the iterative formula: continuous collector current at t c = 25 c 80 a i c (1) continuous collector current at t c = 100 c 40 a i cl (2) 2. vclamp = 80% of v ces , t j =125 c, r g =10 , v ge =15 v turn-off latching current 85 a i cp (3) 3. pulse width limited by maximum junction temperature and turn-off within rbsoa pulsed collector current 120 a v ge gate-emitter voltage 25 v t scw short circuit withstand time, v ce = 0.5 v (br)ces t j = 125 c, r g = 10 , v ge = 12 v 10 s p tot total dissipation at t c = 25 c 240 w i f diode rms forward current at t c = 25 c 30 a i fsm surge non repetitive forward current t p = 10 ms sinusoidal 100 a t j operating junction temperature ? 55 to 125 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case igbt 0.42 c/w r thj-case thermal resistance junction-case diode 1.6 c/w r thj-amb thermal resistance junction-ambient 50 c/w i c t c () t jmax () t c ? r thj c ? v ce sat () max () t jmax () i c t c () , () ------------------------------------------------------------------------------------------------------- =
electrical characteristics STGW40N120KD 4/10 doc id 15360 rev 3 2 electrical characteristics (t j = 25 c unless otherwise specified) table 4. static symbol parameter test cond itions min. typ. max. unit v (br)ces collector-emitter breakdown voltage (v ge = 0) i c = 1 ma 1200 v v ce(sat) collector-emitter saturation voltage v ge = 15 v, i c = 30 a v ge = 15 v, i c = 30 a, t j =125 c 2.8 2.7 3.85 v v v ge(th) gate threshold voltage v ce = v ge , i c = 1ma 4.5 6.5 v i ces collector cut-off current (v ge = 0) v ce =1200 v v ce =1200 v, t j =125 c 500 10 a ma i ges gate-emitter leakage current (v ce = 0) v ge = 20 v 100 na table 5. dynamic symbol parameter test conditions min. typ. max. unit c ies c oes c res input capacitance output capacitance reverse transfer capacitance v ce = 25 v, f = 1 mhz, v ge =0 - 2577 196 39.5 - pf pf pf q g q ge q gc total gate charge gate-emitter charge gate-collector charge v ce = 960 v, i c = 30 a,v ge =15 v - 126 22.2 67 - nc nc nc
STGW40N120KD electrical characteristics doc id 15360 rev 3 5/10 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 30 a r g = 10 , v ge = 15 v, (see figure 2 ) - 48 40 540 - ns ns a/s t d(on) t r (di/dt) on turn-on delay time current rise time turn-on current slope v cc = 960 v, i c = 30 a r g = 10 , v ge = 15 v, t j = 125 c (see figure 2 ) - 45 38 665 - ns ns a/s t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 30 a r g = 10 , v ge = 15 v, (see figure 2 ) - 84 338 210 - ns ns ns t r (v off ) t d ( off ) t f off voltage rise time turn-off delay time current fall time v cc = 960 v, i c = 30 a r g = 10 , v ge = 15 v, t j = 125 c (see figure 2 ) - 144 420 360 - ns ns ns table 7. switching energy (inductive load) symbol parameter test conditions min. typ. max. unit eon (1) e off (2) e ts 1. eon is the turn-on losses when a typi cal diode is used in the test circuit in figure 2 . if the igbt is offered in a package with a co-pack diode, the co-pack diode is used as exter nal diode. igbts and diode are at the same temperature (25c and 125c) 2. turn-off losses include also the tail of the collector current turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 30 a r g = 10 , v ge = 15 v, (see figure 2 ) - 3.7 5.7 9.4 - mj mj mj eon (1) e off (2) e ts turn-on switching losses turn-off switching losses total switching losses v cc = 960 v, i c = 30 a r g = 10 , v ge = 15 v, t j = 125 c (see figure 2 ) - 4.7 9.3 14 - mj mj mj table 8. collector-emitter diode symbol parameter test cond itions min. typ. max. unit v f forward on-voltage i f = 20 a i f = 20 a, t j = 125 c - 1.9 1.7 - v v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a, v r = 45 v, di/dt = 100 a/s (see figure 5 ) - 84 235 5.6 - ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i f = 20 a, v r = 45 v, t j = 125 c, di/dt = 100 a/s (see figure 5 ) - 152 722 9 - ns nc a
test circuits STGW40N120KD 6/10 doc id 15360 rev 3 3 test circuits figure 2. test circuit for inductive load switching figure 3. gate charge test circuit figure 4. switching waveform figure 5. diode recovery time waveform am01504v1 am01505v1 am01506v1 90 % 10 % 90 % 10 % v g v ce i c td(on) to n tr(ion) td(off) toff tf tr(voff) tcro ss 90 % 10 % am01507v1 i rrm i f di/dt t rr t a t b q rr i rrm t v f di/dt
STGW40N120KD package mechanical data doc id 15360 rev 3 7/10 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STGW40N120KD 8/10 doc id 15360 rev 3 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
STGW40N120KD revision history doc id 15360 rev 3 9/10 5 revision history table 9. document revision history date revision changes 22-jan-2009 1 initial release 29-jun-2009 2 document status promoted from preliminary data to datasheet. 09-jul-2009 3 inserted dynamic values table 5 on page 4 , table 6 on page 5 and table 7 on page 5 .
STGW40N120KD 10/10 doc id 15360 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2009 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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